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Same model may have multiple batches, images only for reference.
SUP75P05-08-E3 Vishay
Same model may have multiple batches, images only for reference.

SUP75P05-08-E3

Part No SUP75P05-08-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 55V 75A TO220-3
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Cut Reel
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 225nC @ 10V
Max Input Capacitance 8500pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.7W (Ta), 250W (Tc)
Maximum Rds On at Id,Vgs 8 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 1104136-SUP75P05-08-E3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SUP75P05-08-E3 CAD Model

Description

The Vishay 1104136-SUP75P05-08-E3 is a P-Channel MOSFET with a Drain-Source Breakdown Voltage of 55V and Continuous Drain Current at 25°C of 75A (Tc).

  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current: 75A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Rds On: 8 mOhm @ 30A @ 10V
  • Package: TO-220AB
  • Mounting: through hole
  • Power Dissipation: 3.7W (Ta), 250W (Tc)
  • Operating Temperature Range: -55°C to 175°C (TJ)
  • Supply and Demand Status: balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
2+ $25.8088 $51.6176
5+ $21.1765 $105.8825
8+ $20.5147 $164.1176
11+ $19.8530 $218.3830
14+ $19.1912 $268.6768
18+ $17.2059 $309.7062
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