The SUP90N06-5M0P is an N-Channel power MOSFET from Vishay. This MOSFET is designed to offer a good balance of low on-resistance and gate charge for efficient power switching in various applications.

Applications:

• Synchronous Rectification
• DC-DC Converters
• Power Management
• Motor Control

Features:

• N-Channel MOSFET
• Low On-Resistance: RDS(on) = 5 mΩ (typical) at VGS = 10V
• Low Gate Charge
• 100% UIS Tested
• Halogen-Free According to IEC 61249-2-21

Benefits:

• High efficiency in power conversion applications due to its very low on-resistance.
• Reduced switching losses due to low gate charge.
• Robustness and reliability, as indicated by the 100% UIS (Unclamped Inductive Switching) testing.
• Environmentally friendly due to its halogen-free construction.

Detailed Specifications:

• Drain-Source Voltage (VDSS): 60V
• Gate-Source Voltage (VGS): ±20V
• Continuous Drain Current (ID): 90A (limited by package)
• Pulsed Drain Current (IDM): 300A
• Single Pulse Avalanche Energy (EAS): 140 mJ
• Operating and Storage Temperature Range: -55 to +175 °C
• Maximum Power Dissipation (PD): 167W

The SUP90N06-5M0P is optimized for high-efficiency power switching. Its extremely low on-resistance minimizes conduction losses, while the low gate charge reduces switching losses. The 100% UIS testing provides a high level of confidence in its ability to withstand transient conditions. This MOSFET is commonly used in synchronous rectification and other demanding power management applications. The device is available in a surface mount package.