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Same model may have multiple batches, images only for reference.
VS-50MT060WHTAPBF Real Image
Same model may have multiple batches, images only for reference.

VS-50MT060WHTAPBF

Part No VS-50MT060WHTAPBF
Manufacturer Vishay
Catalog IGBTs - Modules
Description IGBT MODULE 600V 114A 658W MTP / IGBT Module Half Bridge 600 V 114 A 658 W Chassis Mount MTP
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - IGBTs - IGBT Modules
Mfr Vishay General Semiconductor - Diodes Division
Package Tray
Product Status Obsolete
Configuration Half Bridge
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 114 A
Power - Max 658 W
Vce(on) (Max) @ Vge, Ic 3.2V @ 15V, 100A
Current - Collector Cutoff (Max) 400 µA
Input Capacitance (Cies) @ Vce 7.1 nF @ 30 V
Input Standard
NTC Thermistor No
Temperature Range - Operating -40°C ~ 150°C (TJ)
Mounting Type Chassis Mount
Package / Case 12-MTP Module
Supplier Device Package MTP
Base Product Number 50MT060
Standard Package 15
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1351849-VS-50MT060WHTAPBF
Ultra Librarian 3D Model Ultra Librarian VS-50MT060WHTAPBF CAD Model

Description

The Vishay General Semiconductor - Diodes Division VS-50MT060WHTAPBF IGBT module is an excellent choice for high power applications.

  • Power: 658 W
  • Configuration: Half Bridge
  • Voltage: 600 V
  • Current: 114 A
  • Input: Standard
  • NTC Thermistor: Not Present
  • Mounting Type: Chassis Mount
  • Case: 12-MTP Module
  • Temperature Range: -40°C to 150°C (TJ)

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