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NCE6075K

Part No NCE6075K
Manufacturer Wuxi NCE Power Semiconductor Co., Ltd
Description NCE N-Channel Enhancement Mode Power MOSFET
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Manufacturer Wuxi NCE Power Semiconductor Co., Ltd
Win Source Part Number 1229771-NCE6075K
Manufacturer Homepage www.ncepower.com
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian NCE6075K CAD Model

Description

The NCE6075K is a Power MOSFET from Wuxi NCE Power Semiconductor Co., Ltd. It's designed for high-efficiency switching applications, offering low on-resistance and gate charge for improved performance. This MOSFET is commonly used in power supplies, motor control, and DC-DC converters.

Applications

  • Power Supplies
  • Motor Control
  • DC-DC Converters
  • Battery Management Systems
  • LED Lighting

Features

  • Low On-Resistance (RDS(on)): Minimizes power loss and improves efficiency.
  • Low Gate Charge (Qg): Reduces switching losses and improves switching speed.
  • Fast Switching Speed: Enables high-frequency operation.
  • Avalanche Rated: Provides robustness against voltage transients.
  • Lead-Free Package: Complies with environmental regulations.
  • Surface Mount Package (TO-252): Facilitates easy assembly.

Benefits

  • High Efficiency: Low RDS(on) minimizes conduction losses.
  • Improved Thermal Performance: Low RDS(on) reduces heat generation.
  • Fast Switching: Enables higher operating frequencies and smaller component sizes.
  • Robust Operation: Avalanche rating provides protection against voltage spikes.
  • Reduced System Cost: High efficiency reduces the need for bulky heat sinks.
  • Environmentally Friendly: Lead-free package complies with RoHS standards.

Additional Details

The NCE6075K is an N-channel enhancement mode power MOSFET. It's specifically designed to minimize on-state resistance (RDS(on)), providing higher efficiency in power switching applications. The device features a low gate charge (Qg), which minimizes the switching losses and allows for higher switching frequencies. The avalanche rating ensures that the MOSFET can withstand voltage transients, improving the overall robustness of the system. The device is available in a TO-252 surface mount package, which makes it easy to assemble on circuit boards.

Specifications:

  • Drain-Source Voltage (VDS): 60V
  • Gate-Source Voltage (VGS): ±20V
  • Continuous Drain Current (ID): 75A
  • On-Resistance (RDS(on)): 7.5 mΩ (at VGS = 10V)
  • Total Gate Charge (Qg): 35 nC (at VGS = 10V)

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