The NCE65T360 is a high-performance N-channel MOSFET from Wuxi NCE Power Semiconductor Co., Ltd. It is designed for high-efficiency power switching applications, offering low on-resistance, fast switching speed, and high avalanche ruggedness. The device is available in a TO-220 package, making it suitable for a wide range of power electronics applications.

Applications:

• Switching power supplies.
• DC-DC converters.
• Motor control.
• LED lighting.
• Solar inverters.

Features:

• Low on-resistance: Reduces power loss and improves efficiency.
• Fast switching speed: Enables high-frequency operation.
• High avalanche ruggedness: Provides robust performance under transient conditions.
• TO-220 package: Offers easy mounting and good thermal performance.
• RoHS compliant: Complies with environmental regulations.
• N-Channel: Can be used on the low side of a circuit.

Benefits:

• Improved efficiency: Low on-resistance minimizes power dissipation.
• Reduced size: TO-220 offers good thermal performance for the package size.
• Simplified design: low gate charge simplifies driver circuitry.
• Reliable performance: NCE's reputation for quality ensures reliable operation.

Additional Details:

The NCE65T360 has a drain-source voltage (Vds) rating of 650V and a continuous drain current (Id) rating of 15A. The on-resistance (Rds(on)) is typically 0.36 Ω at Vgs = 10V. The gate threshold voltage (Vth) is typically 3V. The device is designed for through-hole assembly. This MOSFET is an excellent choice for applications requiring efficient and robust switching performance.