The NCE82H110 is an N-Channel enhancement mode MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Wuxi NCE Power Semiconductor Co., Ltd. It is designed for high-efficiency power switching applications, such as synchronous rectification in DC-DC converters, motor control, and load switching. This MOSFET features low on-resistance and high avalanche ruggedness, making it suitable for demanding industrial and consumer applications.

Applications

• Synchronous Rectification in DC-DC Converters
• Motor Control
• Load Switching
• Power Inverters
• Uninterruptible Power Supplies (UPS)

Features

• N-Channel Enhancement Mode
• Low On-Resistance (RDS(on))
• High Avalanche Ruggedness
• Fast Switching Speed
• 100V Drain-Source Voltage

Benefits

• Improves Efficiency in Power Conversion Circuits
• Reduces Power Loss and Heat Generation
• Provides Reliable Operation in Harsh Environments
• Enables High-Frequency Switching
• Suitable for a Wide Range of Power Applications

Additional Details

The NCE82H110 is typically packaged in a TO-220 or similar through-hole package for easy mounting on PCBs. The low on-resistance minimizes conduction losses, improving the overall efficiency of the power circuit. The high avalanche ruggedness ensures that the MOSFET can withstand transient voltage spikes without damage. Wuxi NCE Power Semiconductor is a growing manufacturer of power semiconductors, and the NCE82H110 is designed to meet industry standards for performance and reliability. The specific gate charge, input capacitance, and other electrical characteristics are detailed in the manufacturer's datasheet.