The NCEP85T11 is an N-channel enhancement mode power MOSFET produced by Wuxi NCE Power Semiconductor. It is designed for high-efficiency switching applications, offering a good balance of low on-resistance and low gate charge. This makes it well-suited for applications like synchronous rectification, DC-DC converters, and power management circuits.

Applications

• Synchronous Rectification in Power Supplies
• DC-DC Converters
• Power Management Systems
• Motor Control Applications
• Load Switching

Features

• Low On-Resistance (RDS(on))
• Low Gate Charge (Qg)
• High Avalanche Energy
• Fast Switching Speed
• Lead-Free Package
• RoHS Compliant

Benefits

• Improved Energy Efficiency
• Reduced Power Dissipation
• Enhanced System Reliability
• Simplified Thermal Management
• Compact Design

Technical Specifications

The NCEP85T11 has a drain-source voltage (VDS) rating of 85V. The continuous drain current (ID) rating is approximately 11A, depending on thermal management and package type. It features a low on-resistance (RDS(on)), typically around 10 mΩ at a gate-source voltage (VGS) of 10V. The gate threshold voltage (VGS(th)) is typically between 1V and 3V. The common package type is TO-220. The operating temperature range is generally from -55°C to +175°C. Its low gate charge minimizes switching losses, contributing to higher efficiency at higher switching frequencies. It offers a robust avalanche energy rating.

The low on-resistance of the NCEP85T11 minimizes conduction losses, resulting in improved overall efficiency. Its low gate charge reduces the drive requirements and minimizes switching losses. The high avalanche energy rating provides added robustness against voltage spikes. This MOSFET offers a good combination of performance and reliability for a range of power switching applications.