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Same model may have multiple batches, images only for reference.
IRF613
Same model may have multiple batches, images only for reference.

IRF613

Part No IRF613
Manufacturer Harris Corporation
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL POWER MOSFET / N-Channel 150 V 2.6A (Tc) 43W (Tc) Through Hole TO-220AB
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Harris Corporation
Package Bulk
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150 V
Current - Continuous Drain (Id) @ 25°C 2.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2.4Ohm @ 1.6A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8.2 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 135 pF @ 25 V
Power Dissipation (Max) 43W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
RoHS Status RoHS non-compliant
MSL Level 1 (Unlimited)
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 8541.29.0095
Other Names HARHARIRF613,2156-IRF613
Standard Package 1
Win Source Part Number 1065493-IRF613
Ultra Librarian 3D Model Ultra Librarian IRF613 CAD Model

Description

The IRF613 is a N-Channel MOSFET transistor designed for discrete semiconductor products.

  • Drain to Source Voltage: 150V
  • Continuous Drain Current: 2.6A @ 25°C
  • Maximum Rds On: 2.4Ohm @ 1.6A, 10V
  • Gate Charge (Qg): 8.2 nC @ 10V
  • Input Capacitance (Ciss): 135 pF @ 25V
  • Maximum Vgs: ±20V
  • Power Dissipation: 43W @ Tc
  • Mounting: Through hole (TO-220-3 package)
  • RoHS Compliance: Non-compliant

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605+ $0.5740 $347.2700
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