The UMH1N is a dual NPN bipolar transistor array pre-biased with a base resistor. It is designed for use in discrete semiconductor products, specifically in transistor arrays. The package is a 6-TSSOP, SC-88, SOT-363 surface mount type, which makes it suitable for compact electronic devices. The UMH1N has a maximum power rating of 150mW and a maximum collector-emitter breakdown voltage of 50V. It can handle a maximum collector current of 100mA. With a Vce saturation of 300mV at 500μA and 10mA, it offers low saturation voltage for efficient operation. The UMH1N has a DC current gain of 56 at 5mA and 5V, ensuring reliable amplification. Its transition frequency is 250MHz, making it suitable for high-frequency applications. The UMH1N is an active product from Yangzhou yangjie electronic co., ltd, and it is unaffected by REACH regulations. With its unique features and high performance, the UMH1N is an ideal choice for various electronic applications.