The FZT855 is a high-performance PNP transistor manufactured by Zetex Semiconductors (now Diodes Incorporated). This transistor is designed for applications requiring high current gain and low saturation voltage.

Applications

• Power Management
• Motor Control
• Linear Amplification
• High-Side Switching

Features

• High Collector Current (IC): Up to -3A continuous collector current.
• Low Saturation Voltage (VCE(sat)): Minimizes power dissipation.
• High Current Gain (hFE): Ensures efficient amplification and switching.
• SOT-223 Package: Provides good power dissipation in a compact surface-mount package.
• Complementary NPN Transistor: FZT955

Benefits

• High Efficiency: Low saturation voltage reduces power loss and improves overall efficiency.
• Reliable Performance: Robust design ensures stable operation under various conditions.
• Compact Design: SOT-223 package allows for space-saving designs.
• Simplified Circuit Design: High current gain simplifies biasing and drive requirements.

Specifications

The FZT855 features a collector-emitter voltage (VCEO) of -25V and a continuous collector current (IC) of -3A. The saturation voltage (VCE(sat)) is typically less than -0.3V at a collector current of -1A. The current gain (hFE) is typically greater than 100 at a collector current of -1A. Detailed electrical characteristics, thermal resistance, and package dimensions are available in the datasheet.