AM29F040B-120PC

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Part No AM29F040B-120PC
Manufacturer Advanced Micro Devices
Catalog Hard To Find
Description 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
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Manufacturer Advanced Micro Devices
Win Source Part Number 1143749-AM29F040B-120PC
Manufacturer Homepage www.amd.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model   Symbol, Footprint, 3D Model

Description

The AM29F040B-120PC is a 4-Megabit, 5.0 Volt-only Flash memory device organized as 512K x 8 bits. It is manufactured by Advanced Micro Devices (AMD). The device is offered in a 32-pin PLCC package. The AM29F040B is designed to be programmed in-system with the standard system 5.0 volt VCC supply. A 12.0 volt VPP is not required for program or erase operations. The device can also be programmed in standard EPROM programmers.

This device offers a good balance of capacity and performance for a range of embedded applications. Its reliable operation and relatively fast access times contribute to its suitability for various systems.

Applications

  • Embedded Systems
  • Microcontrollers
  • Data Logging
  • Boot Memory
  • Industrial Automation

Features

  • 4 Megabit (512K x 8-Bit)
  • 5.0 Volt-only operation for read, erase and program
  • Sector Erase Architecture: Eight uniform sectors of 64 Kbyte each
  • Fast access time: 120 ns
  • Low power consumption
  • Erase Suspend/Resume
  • Program Suspend/Resume
  • Unlock Bypass Program Operation
  • Sector Protection
  • 32-Pin PLCC Package

Benefits

  • Simplified System Design: 5.0 volt-only operation simplifies power supply requirements.
  • Fast Program Times: Enables efficient production and reduces programming overhead.
  • High Endurance: Enhances data retention and system reliability.
  • Low Power Consumption: Suitable for battery-powered or energy-conscious applications.
  • Flexible Sector Architecture: Facilitates efficient memory management.

Additional Details

The AM29F040B-120PC includes features such as sector protection, which prevents accidental program or erase operations in designated memory regions. The device also supports program and erase suspend/resume, allowing interruption of program or erase cycles for system-level tasks. It offers a minimum of 10,000 write/erase cycles. Sector erase time is typically around 0.7 seconds, and byte programming time is typically 10µs.

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