The APT30M85BVFR is a high-performance RF Power MOSFET designed for demanding applications requiring high power gain and efficiency. Manufactured by Advanced Power Technology, this MOSFET is engineered to provide exceptional performance in RF amplifiers and high-frequency switching applications.

Applications:

• RF Power Amplifiers
• High-Frequency Inverters
• Industrial RF Generators
• Medical RF Equipment
• Plasma Generators

Features:

• High Breakdown Voltage: Provides robust performance in high-voltage environments.
• Low Input Capacitance: Minimizes gate drive power requirements and enhances switching speed.
• Fast Switching Speed: Reduces switching losses and improves overall efficiency.
• High Power Gain: Enables efficient power amplification in RF applications.
• Enhanced Ruggedness: Designed to withstand high voltage and current stress, ensuring reliable operation.
• Low On-Resistance (RDS(on)): Minimizes conduction losses, maximizing efficiency.

Benefits:

• Increased Efficiency: Low RDS(on) and fast switching speed contribute to higher overall efficiency.
• Improved Power Density: High power gain allows for smaller and more compact amplifier designs.
• Enhanced Reliability: Rugged design and high breakdown voltage ensure stable performance in harsh conditions.
• Simplified Design: Low input capacitance simplifies gate drive circuitry.
• Reduced Heat Dissipation: High efficiency minimizes heat generation, potentially reducing cooling needs.

The APT30M85BVFR is an ideal choice for designers seeking a high-performance and reliable RF Power MOSFET. Its advanced features and robust design make it suitable for a broad range of high-frequency applications.

Technical Specifications:

Voltage: (Specific voltage rating to be obtained from datasheet)

Current: (Specific current rating to be obtained from datasheet)

RDS(on): (Specific on-resistance value to be obtained from datasheet)

Package: (Specific package information to be obtained from datasheet)