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IRF7822TRPBF

Part No IRF7822TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 18A 8-SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 18A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 60nC @ 5V
Max Input Capacitance 5500pF @ 16V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 3.1W (Ta)
Maximum Rds On at Id,Vgs 6.5 mOhm @ 15A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 001956-IRF7822TRPBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Quantity per package 4k pcs
Ultra Librarian 3D Model Ultra Librarian IRF7822TRPBF CAD Model

Description

The Infineon Technologies IRF7822TRPBF is an N-channel MOSFET transistor that is commonly used in discrete semiconductor products.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 18A @ 25°C
  • Maximum Rds On @ Id,Vgs: 6.5 mOhm @ 15A, 4.5V
  • Gate-Source Threshold Voltage: 1V @ 250μA
  • Maximum Gate Charge: 60nC @ 5V
  • Maximum Input Capacitance: 5500pF @ 16V
  • Package: 8-SO
  • Maximum Power Dissipation: 3.1W @ Ta
  • Suitable for: Circuits that require N-channel MOSFET transistors

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Pricing & Ordering

Quantity Unit Price Ext. Price
75+ $0.7785 $58.3875
160+ $0.7288 $116.6080
250+ $0.7034 $175.8500
355+ $0.6537 $232.0635
460+ $0.6283 $289.0180
575+ $0.6029 $346.6675
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 29,700 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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