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AO4264E Real Image AO4264E real image15102
Same model may have multiple batches, images only for reference.
AO4264E Real Image AO4264E real image15102
AO4264E Real Image AO4264E real image15102
Same model may have multiple batches, images only for reference.

AO4264E

Part No AO4264E
Manufacturer Alpha & Omega Semiconductor Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 13.5A 8SO
Datasheet
AO4264E Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Alpha & Omega Semiconductor Inc.
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 13.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.4V @ 250μA
Max Gate Charge 13nC @ 4.5V
Max Input Capacitance 1100pF @ 30V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.1W (Ta)
Maximum Rds On at Id,Vgs 9.8 mOhm @ 13.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 1016769-AO4264E
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian AO4264E CAD Model

Description

The AO4264E MOSFET by Alpha & Omega Semiconductor Inc. is a surface-mount N-channel polarity transistor.

  • Polarity: N-channel
  • Maximum Power Dissipation: 3.1W (Ta)
  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current @ 25°C: 13.5A (Ta)
  • Gate-Source Threshold Voltage: 2.4V @ 250μA
  • Maximum Gate Charge: 13nC @ 4.5V
  • Maximum Input Capacitance: 1100pF @ 30V
  • Maximum Rds On @ Id,Vgs: 9.8 mOhm @ 13.5A, 10V
  • Category: Discrete Semiconductor Products
  • Package: 8-SO
  • Supply and Demand Status: Balanced

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Quantity Unit Price Ext. Price
325+ $0.1543 $50.1475
790+ $0.1266 $100.0140
1,225+ $0.1226 $150.1850
1,685+ $0.1187 $200.0095
2,180+ $0.1147 $250.0460
2,920+ $0.1029 $300.4680
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