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Same model may have multiple batches, images only for reference.
AO4459L Real Image
Same model may have multiple batches, images only for reference.

AO4459L

Part No AO4459L
Manufacturer Alpha & Omega Semiconductor Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 6.5A 8SOIC
Datasheet
AO4459L Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Alpha & Omega Semiconductor Inc.
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 6.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 16nC @ 10V
Max Input Capacitance 830pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.1W (Ta)
Maximum Rds On at Id,Vgs 46 mOhm @ 6.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 1016790-AO4459L
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian AO4459L CAD Model

Description

The AO4459L MOSFET is a P-Channel device manufactured by Alpha & Omega Semiconductor Inc.

  • Power Dissipation: 3.1W (Ta)
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 6.5A (Ta) @ 25°C
  • Gate-Source Threshold Voltage: 2.5V @ 250μA
  • Maximum Rds On @ Id, Vgs: 46 mOhm @ 6.5A, 10V
  • Maximum Gate-Source Voltage: ±20V
  • Operating Temperature: -55°C to 150°C (TJ)
  • Case/Package: 8-SO
  • Dimension: 8-SOIC (0.154", 3.90mm Width)

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Quantity Unit Price Ext. Price
170+ $0.3430 $58.3100
410+ $0.2818 $115.5380
640+ $0.2726 $174.4640
875+ $0.2645 $231.4375
1,135+ $0.2553 $289.7655
1,520+ $0.2287 $347.6240
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Availability: 15,100 pieces
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