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Same model may have multiple batches, images only for reference.
IRF442 Samsung
Same model may have multiple batches, images only for reference.

IRF442

Part No IRF442
Manufacturer Harris Corporation
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL POWER MOSFET
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Harris Corporation
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V
Current - Continuous Drain (Id) @ 25°C 7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.1Ohm @ 4.4A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 63 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1225 pF @ 25 V
Power Dissipation (Max) 125W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-3
Package / Case TO-204AA, TO-3
Standard Package 4 pcs
MSL Level 1 (Unlimited)
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 604327-IRF442
Ultra Librarian 3D Model Ultra Librarian IRF442 CAD Model

Description

The IRF442 is an N-Channel MOSFET transistor designed for high power applications.

  • Drain to Source Voltage (Vdss): 500V
  • Continuous Drain Current (Id): 7A @ 25°C
  • Rds On (Max): 1.1 Ohm @ 4.4A and 10V
  • Power Dissipation: 125W
  • Packages: TO-204AA and TO-3
  • Gate Charge (Qg): 63nC @ 10V
  • Input Capacitance (Ciss): 1225pF @ 25V
  • Operating Temperature Range: -55°C to 150°C
  • Manufacturer: Harris Corporation

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.6817 $58.8595
85+ $1.3802 $117.3170
130+ $1.3363 $173.7190
180+ $1.2936 $232.8480
235+ $1.2509 $293.9615
310+ $1.1215 $347.6650
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Availability: 8,600 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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