The IPI60R125CPXKSA1 is a CoolMOS™ C7 series power MOSFET from Infineon Technologies. This MOSFET is engineered for high-efficiency switched-mode power supplies (SMPS) and other power conversion applications. It is designed to minimize both conduction and switching losses, resulting in increased power density and system efficiency.

Applications:

• Server Power Supplies
• Telecom Power Supplies
• PC Power Supplies
• Adapter Applications
• Lighting Systems

Features:

• 600V CoolMOS™ C7 Technology: Latest generation superjunction MOSFET technology.
• Reduced Switching Losses: Low Eoss and Qg for improved efficiency.
• Optimized for hard switching topologies: Designed for reliable operation in hard-switching applications.
• Very low R<sub>DS(on): Reduces conduction losses to a minimum.
• Integrated gate resistor RG: Simplifies design and reduces external components.
• Pb-free plating; RoHS compliant: Environmentally friendly.

Benefits:

• High Efficiency: Minimizes power dissipation and reduces heat generation.
• Increased Power Density: Enables smaller and more compact power supply designs.
• Enhanced System Reliability: Robust design ensures long-term performance.
• Simplified Design: Integrated gate resistor reduces component count and simplifies layout.
• Lower System Cost: Reduced power losses and smaller size contribute to overall cost savings.

Additional Details:

The IPI60R125CPXKSA1 has a drain-source voltage (V<sub>DS) of 600V and an on-state resistance (R<sub>DS(on)) of 0.125 Ohms. It is available in a PG-TO262 (I2PAK) package. The CoolMOS™ C7 technology offers a significant reduction in on-resistance and switching losses compared to previous generations. The integrated gate resistor improves EMI performance and simplifies gate drive design. This MOSFET is particularly well-suited for hard-switching topologies commonly found in power factor correction (PFC) and flyback converters.