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AO4722

Part No AO4722
Manufacturer Alpha & Omega Semiconductor Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 8.5A 8SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Alpha & Omega Semiconductor Inc.
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 8.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 20nC @ 10V
Max Input Capacitance 1100pF @ 15V
Maximum Gate-Source Voltage ±20V
FET Feature Schottky Diode (Body)
Power Dissipation (Max) 1.7W (Ta)
Maximum Rds On at Id,Vgs 14 mOhm @ 11.6A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOIC
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 139424-AO4722
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian AO4722 CAD Model

Description

AO4722 Dual N-Channel MOSFET

The AO4722 is a high-performance dual N-Channel MOSFET known for its efficiency and reliability in a wide range of applications. Designed to meet the demands of modern electronics, this compact component offers robust performance with low on-resistance and high-speed switching capabilities.

  • Applications:
    • Switching power supplies
    • Load switch applications
    • DC-DC converters
    • Laptop power management
  • Features & Benefits:
    • Low on-state resistance for efficient current flow
    • High-speed switching for improved performance
    • Compact package suitable for space-constrained designs
    • Thermal resistance characteristics for stable operation

Additional Details: With its excellent heat dissipation properties and reliable functionality, the AO4722 enhances the performance and longevity of your electronic projects.

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