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Same model may have multiple batches, images only for reference.
AO6604L_001 Real Image
Same model may have multiple batches, images only for reference.

AO6604L_001

Part No AO6604L_001
Manufacturer Alpha & Omega Semiconductor Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N/P-CH 20V 6-TSOP
Datasheet
AO6604L_001 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Alpha & Omega Semiconductor Inc.
Packaging Reel - TR
Status Obsolete(EOL)
FET Type N and P-Channel Complementary
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 3.4A, 2.5A
Maximum Rds On at Id,Vgs 60 mOhm @ 3.4A, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 3.8nC @ 4.5V
Max Input Capacitance 320pF @ 10V
Maximum Power Dissipation 1.1W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-TSOP
Win Source Part Number 1016831-AO6604L_001
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian AO6604L_001 CAD Model

Description

The AO6604L_001 is a complementary N and P-channel MOSFET from Alpha & Omega Semiconductor Inc.

  • Logic Level Gate: Yes
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Case: 6-TSOP
  • Maximum Power Dissipation: 1.1W
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current (25°C): 3.4A and 2.5A
  • Gate-Source Threshold Voltage: 1V @ 250μA
  • Maximum Gate Charge: 3.8nC @ 4.5V
  • Maximum Input Capacitance: 320pF @ 10V
  • Maximum Rds On (Id,Vgs): 60 mOhm @ 3.4A, 4.5V
  • Supply and Demand Status: Balanced

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