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AOB418L

Part No AOB418L
Manufacturer Alpha & Omega Semiconductor Inc.
Catalog FETs - Single
Description N-Channel Enhancement Mode Field Effect Transistor | MOSFET N-CH 100V 105A D2PAK
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Alpha & Omega Semiconductor Inc.
Packaging Reel
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 100V
Id - Continuous Drain Current 9.5A, 105A
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Maximum) at Id, Vgs 9.7mOhm at 20A, 10V
Gate Source Voltage(th) (Maximum) at Id 3.9V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 83nC at 10V
Gate Source Voltage (Maximum) ±12V
Input Capacitance (Ciss) (Maximum) at Vds 5200pF at 50V
Power Dissipation (Maximum) 2.1W, 333W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style SMD
Supplier Device Package TO-263 (D2Pak)
Manufacturer Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 1144893-AOB418L
Manufacturer Homepage www.aosmd.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian AOB418L CAD Model

Description

The Alpha & Omega Semiconductor Inc. MOSFET is a N-Channel transistor that comes in a TO-263 (D2Pak) package manufactured by Alpha & Omega Semiconductor Inc.

  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 9.5A, 105A
  • Gate-Source Voltage: ±12V
  • Gate-Source Voltage Threshold: 3.9V @ 250μA
  • Maximum Input Capacitance: 5200pF @ 50V
  • Maximum Gate Charge: 83nC @ 10V
  • Status: Obsolete
  • Power Dissipation: 2.1W, 333W
  • Supply and Demand: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.6537 $58.8330
220+ $0.5359 $117.8980
335+ $0.5198 $174.1330
460+ $0.5024 $231.1040
595+ $0.4863 $289.3485
800+ $0.4354 $348.3200
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,598 pieces
MOQ: 90 pcs
Order Increment : 1 pcs
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