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Same model may have multiple batches, images only for reference.
AOD6N50 Real Image
Same model may have multiple batches, images only for reference.

AOD6N50

Part No AOD6N50
Manufacturer Alpha & Omega Semiconductor Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 5.3A TO252
Datasheet
AOD6N50 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Alpha & Omega Semiconductor Inc.
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 5.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 250μA
Max Gate Charge 14nC @ 10V
Max Input Capacitance 670pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 104W (Tc)
Maximum Rds On at Id,Vgs 1.4 Ohm @ 2.5A, 10V
Temperature Range - Operating -50°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package TO-252, (D-Pak)
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1016938-AOD6N50
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian AOD6N50 CAD Model

Description

The AOD6N50 by Alpha & Omega Semiconductor Inc. is an N-Channel MOSFET designed for use in discrete semiconductor products.

  • Drain-Source Breakdown Voltage: 500V
  • Continuous Drain Current @ 25°C: 5.3A (Tc)
  • Gate-Source Threshold Voltage: 4.5V @ 250μA
  • Max Gate Charge: 14nC @ 10V
  • Maximum Rds On @ Id,Vgs: 1.4 Ohm @ 2.5A, 10V
  • Package: TO-252 (D-Pak)
  • Supply and Demand Status: sufficient

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