The MOSFET is a high-power N-Channel transistor with a drain-source breakdown voltage of 600V and a continuous drain current of 20A @ 25°C from Alpha & Omega Semiconductor Inc.

• Drain-Source Breakdown Voltage: 600V
• Continuous Drain Current: 20A @ 25°C
• Power Dissipation: 266W (Tc)
• Rds On (Max): 199 mOhm @ 10A, 10V
• Mounting Type: Through Hole
• Package: TO-247
• Gate-Source Voltage (Max): ±30V
• Gate-Source Threshold Voltage: 4.1V @ 250μA
• Input Capacitance (Max): 1038pF @ 100V
• Gate Charge (Max): 19.8nC @ 10V
• Supply and Demand Status: Balanced
• Units per Package: 30