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Same model may have multiple batches, images only for reference.
AOM033V120X2
Same model may have multiple batches, images only for reference.

AOM033V120X2

Part No AOM033V120X2
Manufacturer Alpha & Omega Semiconductor Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description 1200V SILICON CARBIDE MOSFET / N-Channel 1200 V 68A (Tc) 300W (Ta) Through Hole TO-247-4L
Datasheet
AOM033V120X2 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Alpha & Omega Semiconductor Inc.
Series -
Package Tube
Product Status Active
FET Type N-Channel
Technology SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 68A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 15V
Rds On (Max) @ Id, Vgs 43mOhm @ 20A, 15V
Vgs(th) (Max) @ Id 2.8V @ 17.5mA
Gate Charge (Qg) (Max) @ Vgs 104 nC @ 15 V
Vgs (Max) +15V, -5V
Input Capacitance (Ciss) (Max) @ Vds 2908 pF @ 800 V
FET Feature -
Power Dissipation (Max) 300W (Ta)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247-4L
Package / Case TO-247-4
Base Product Number AOM033
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1354295-AOM033V120X2
Ultra Librarian 3D Model Ultra Librarian AOM033V120X2 CAD Model

Description

The AOM033V120X2 is an active N-Channel SiC (Silicon Carbide Junction Transistor) FET (Field-Effect Transistor) from Alpha & Omega Semiconductor Inc.

  • Package: TO-247-4
  • Temperature Range: -55°C to 175°C
  • Vdss: 1200V
  • Id @ 25°C: 68A
  • Vgs: +15V to -5V

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