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AON2705

Part No AON2705
Manufacturer Alpha & Omega Semiconductor Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 3A 6DFN
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Alpha & Omega Semiconductor Inc.
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.3V @ 250μA
Max Gate Charge 6nC @ 10V
Max Input Capacitance 180pF @ 15V
Maximum Gate-Source Voltage ±20V
FET Feature Schottky Diode (Body)
Power Dissipation (Max) 1.5W (Ta)
Maximum Rds On at Id,Vgs 108 mOhm @ 3A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-DFN-EP (2x2)
Dimension 6-WDFN Exposed Pad
Win Source Part Number 1017010-AON2705
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian AON2705 CAD Model

Description

The MOSFET with Schottky Diode (Body) feature from Alpha & Omega Semiconductor Inc. is a P-Channel electronic component.

  • Maximum power dissipation: 1.5W (Ta)
  • Drain-source breakdown voltage: 30V
  • Continuous drain current @ 25°C: 3A (Ta)
  • Gate-source threshold voltage: 2.3V @ 250μA
  • Maximum gate charge: 6nC @ 10V
  • Maximum Rds On @ Id,Vgs: 108 mOhm @ 3A, 10V
  • Temperature range for operating: -55°C to 150°C (TJ)
  • Packaging: Reel - TR
  • Mounting: SMD (SMT)
  • Technology used: MOSFET
  • Drive voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • This product is obsolete (EOL)
  • Its popularity is medium., and the supply and demand status is balance

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