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Same model may have multiple batches, images only for reference.
AON7402L Real Image
Same model may have multiple batches, images only for reference.

AON7402L

Part No AON7402L
Manufacturer Alpha & Omega Semiconductor Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 13.5A 8DFN
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Alpha & Omega Semiconductor Inc.
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 13.5A (Ta), 39A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.2V @ 250μA
Max Gate Charge 17.8nC @ 10V
Max Input Capacitance 770pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.1W (Ta), 26W (Tc)
Maximum Rds On at Id,Vgs 10 mOhm @ 20A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-DFN (3x3)
Dimension 8-PowerSMD, Flat Leads
Win Source Part Number 1017126-AON7402L
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian AON7402L CAD Model

Description

The Alpha & Omega Semiconductor Inc. MOSFET is a high-performance N-Channel transistor with a drain-source breakdown voltage of 30V and a maximum continuous drain current of 13.5A.

  • Maximum Rds On: 10 mOhm @ Id,Vgs of 20A and 10V
  • Application: Discrete semiconductor products
  • Power Dissipation: 3.1W (Ta), 26W (Tc)
  • Temperature Range: -55°C to 150°C (TJ)
  • Package: 8-DFN (3x3)
  • Leads: Flat leads
  • Gate-Source Threshold Voltage: 2.2V @ 250μA
  • Maximum Gate Charge: 17.8nC @ 10V
  • Maximum Input Capacitance: 770pF @ 15V
  • Maximum Gate-Source Voltage: ±20V
  • Status: Obsolete (EOL)
  • Packaging: Reel - TR
  • Supply and Demand Status: Balanced

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