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AONR34332C

Part No AONR34332C
Manufacturer Alpha & Omega Semiconductor Inc.
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Alpha & Omega Semiconductor Inc.
Series AlphaMOS
Package Tape & Reel (TR)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 48A (Ta), 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V
Rds On (Max) @ Id, Vgs 1.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 105 nC @ 10 V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 4175 pF @ 15 V
Power Dissipation (Max) 6.2W (Ta), 83.3W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package 8-DFN-EP (3.3x3.3)
Package / Case 8-PowerWDFN
Base Product Number AONR34332
Other Names 785-AONR34332CTR
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1278410-AONR34332C
Ultra Librarian 3D Model Ultra Librarian AONR34332C CAD Model

Description

The AONR34332C is an N-Channel MOSFET transistor from Alpha & Omega Semiconductor Inc.

  • Series: AlphaMOS
  • Package: Tape & Reel
  • Drain to Source Voltage: 30V
  • Continuous Drain Current: 48A (Ta) or 50A (Tc)
  • On-Resistance: 1.8mOhm @ 20A, 10V
  • Gate Threshold Voltage: 1.2V @ 250μA
  • Power Dissipation: 6.2W (Ta) or 83.3W (Tc)
  • Package Size: 3.3x3.3
  • Temperature Range: -55°C to 150°C (TJ)
  • Gate Charge: 105nC @ 10V
  • Input Capacitance: 4175pF @ 15V
  • ECCN Category: EAR99

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Pricing & Ordering

Quantity Unit Price Ext. Price
120+ $0.5013 $60.1560
285+ $0.4112 $117.1920
435+ $0.3985 $173.3475
600+ $0.3858 $231.4800
775+ $0.3731 $289.1525
1,040+ $0.3338 $347.1520
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 30,000 pieces
MOQ: 120 pcs
Order Increment : 1 pcs
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