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Same model may have multiple batches, images only for reference.
AOT10T60PL Real Image
Same model may have multiple batches, images only for reference.

AOT10T60PL

Part No AOT10T60PL
Manufacturer Alpha & Omega Semiconductor Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 10A TO-220 / Trans MOSFET N-CH 600V 10A 3-Pin(3+Tab) TO-220 Tube
Datasheet
AOT10T60PL Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Alpha & Omega Semiconductor Inc.
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 600V
Current - Continuous Drain (Id) @ 25°C 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 40nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 1595pF @ 100V
Vgs (Maximum) ±30V
Power Dissipation (Maximum) 208W (Tc)
Rds On (Maximum) @ Id, Vgs 700 mOhm @ 5A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package TO-220
Package TO-220-3
Win Source Part Number 768566-AOT10T60PL
Popularity Medium
Supply and Demand Status Limited
Family Name AOT10T60PL
ECCN EAR99
Country of Origin China
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian AOT10T60PL CAD Model

Description

The AOT10T60PL is an N-channel MOSFET with a drain-source voltage rating of 600V and a continuous drain current rating of 10A. It is designed to provide a low on-resistance and fast switching speed in various electronic circuits. The AOT10T60PL is a through-hole device with the following specifications:

  • Package: TO-220-3
  • Gate-Source Threshold Voltage: 5V @ 250 microamperes
  • Gate Charge: 40nC @ 10V
  • Maximum Power Dissipation: 208W @ Tc
  • Maximum On-Resistance: 700 milliohms @ 5A and 10V
  • Status: Obsolete

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