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Same model may have multiple batches, images only for reference.
AOT3N60 Alpha & Omega Semiconductor Inc.
Same model may have multiple batches, images only for reference.

AOT3N60

Part No AOT3N60
Manufacturer Alpha & Omega Semiconductor Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 2.5A TO-220
Datasheet
AOT3N60 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Alpha & Omega Semiconductor Inc.
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 2.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 250μA
Max Gate Charge 12nC @ 10V
Max Input Capacitance 370pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 83W (Tc)
Maximum Rds On at Id,Vgs 3.5 Ohm @ 1.25A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220
Dimension TO-220-3
Win Source Part Number 1017215-AOT3N60
Popularity Medium
Supply and Demand Status Balance
Quantity per package 1k pcs
Ultra Librarian 3D Model Ultra Librarian AOT3N60 CAD Model

Description

The AOT3N60 is an N-Channel MOSFET manufactured by Alpha & Omega Semiconductor Inc.

  • Category: discrete semiconductor product
  • Drain-Source Breakdown Voltage: 600V
  • Continuous Drain Current: 2.5A
  • Maximum Power Dissipation: 83W (Tc)
  • Package: TO-220
  • Dimensions: TO-220-3
  • Mounting: through a hole
  • Temperature Range: -55°C to 150°C (TJ)
  • Gate-Source Threshold Voltage: 4.5V @ 250μA
  • Maximum Gate Charge: 12nC @ 10V
  • Status: obsolete (EOL)
  • Popularity: medium
  • Supply and Demand Status: balance
  • Package: tube/rail
  • Quantity per package: 1k pcs

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