The Alpha & Omega Semiconductor Inc. MOSFET is a high power dissipation electronic component with a maximum power dissipation of 192W (Tc). It has a drain-source breakdown voltage of 500V and a continuous drain current at 25°C of 8A (Tc). The gate-source threshold voltage is 4.5V at 250μA. The maximum gate charge is 28nC at 10V, and the maximum input capacitance is 1042pF at 25V. This N-channel MOSFET has a maximum Rds On at Id,Vgs of 850 mOhm at 4A, 10V. It is packaged in a TO-220-3 case and has a drive voltage (Max Rds On, Min Rds On) of 10V. The temperature range for operating is -55°C to 150°C (TJ). The supply and demand status is balanced.