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AOTF11C60PL

Part No AOTF11C60PL
Manufacturer Alpha & Omega Semiconductor Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 11A TO220-3F
Datasheet
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Categories Discrete Semiconductor Products
Features N-Channel 600 V 11A (Tc) 37W (Tc) Through Hole TO-220F
Manufacturer Alpha & Omega Semiconductor Inc.
Package Tube
Part Status Obsolete
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Through Hole
Package TO-220-3 Full Pack
Case / Package TO-220F
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Quantity per package 1000
Popularity Medium
Supply and Demand Status Limited
Win Source Part Number 861146-AOTF11C60PL
Ultra Librarian 3D Model Ultra Librarian AOTF11C60PL CAD Model

Description

The AOTF11C60PL is a 600V N-Channel MOSFET from Alpha & Omega Semiconductor, designed for high-voltage, high-power applications requiring high efficiency and robust performance. It is well-suited for use in a variety of power electronics systems.

Applications

  • Power Factor Correction (PFC)
  • Flyback Converters
  • Forward Converters
  • Half-Bridge Converters
  • Full-Bridge Converters

Features

  • 600V Drain-Source Voltage: Designed for high-voltage applications.
  • Low On-Resistance: Reduces conduction losses and improves efficiency.
  • Fast Switching Speed: Minimizes switching losses at high frequencies.
  • Avalanche Rated: Enhances robustness and reliability.
  • Pb-free Lead Plating: Compliant with environmental regulations.

Benefits

  • High System Efficiency: Reduces energy consumption and lowers operating costs.
  • Improved Reliability: Robust design ensures long-term performance.
  • Reduced Heat Dissipation: Low on-resistance minimizes heat generation.
  • Compact Design: Enables smaller and more efficient power supplies.

Additional Details

The AOTF11C60PL utilizes advanced super-junction MOSFET technology, which provides a low on-resistance while maintaining a high breakdown voltage. This combination results in reduced conduction losses and improved efficiency. The MOSFET's fast switching speed allows for higher-frequency operation, reducing the size and cost of passive components. The device is avalanche rated, providing protection against voltage transients and enhancing overall system reliability. The AOTF11C60PL is specifically designed for applications requiring high power density and efficient power conversion.

Maximum Drain-Source Voltage: 600V

Continuous Drain Current: 11A

On-Resistance (RDS(on)): 0.295 Ohms @ VGS = 10V

Gate Threshold Voltage: 3V

Package: TO-220F

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