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AOTF9N90

Part No AOTF9N90
Manufacturer Alpha & Omega Semiconductor Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 900V 9A TO220F
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Alpha & Omega Semiconductor Inc.
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 900V
Continuous Drain Current at 25°C 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 250μA
Max Gate Charge 58nC @ 10V
Max Input Capacitance 2560pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 50W (Tc)
Maximum Rds On at Id,Vgs 1.3 Ohm @ 4.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220-3F
Dimension TO-220-3 Full Pack
Win Source Part Number 039222-AOTF9N90
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian AOTF9N90 CAD Model

Description

AOTF9N90 - N-Channel MOSFET

The high-voltage AOTF9N90 MOSFET is engineered to support high power density designs, ensuring efficient conversion and minimal thermal stress.

  • Applications: Power Switching Circuits, High Voltage Systems, Renewable Energy Systems.
  • Features: 900V Drain-Source Voltage, Robust construction, Low On-State Resistance.
  • Benefits: High thermal efficiency, Prolonged lifecycle, Superior power handling capability.
  • Optimize your high-power applications with the AOTF9N90, offering a perfect balance between performance and reliability.

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $0.8989 $53.9340
140+ $0.7376 $103.2640
210+ $0.7146 $150.0660
290+ $0.6915 $200.5350
375+ $0.6685 $250.6875
505+ $0.5993 $302.6465
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 533 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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