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Same model may have multiple batches, images only for reference.
AOU3N50 Real Image
Same model may have multiple batches, images only for reference.

AOU3N50

Part No AOU3N50
Manufacturer Alpha & Omega Semiconductor Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 2.8A IPAK
Datasheet
AOU3N50 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Alpha & Omega Semiconductor Inc.
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 2.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 250μA
Max Gate Charge 8nC @ 10V
Max Input Capacitance 331pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 57W (Tc)
Maximum Rds On at Id,Vgs 3 Ohm @ 1.5A, 10V
Temperature Range - Operating -50°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-251-3
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 1017292-AOU3N50
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian AOU3N50 CAD Model

Description

The AOU3N50 is a MOSFET transistor manufactured by Alpha & Omega Semiconductor Inc.

  • Supply and Demand Status: sufficient
  • Maximum Drain-Source Breakdown Voltage: 500V
  • Maximum Continuous Drain Current: 2.8A

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Quantity Unit Price Ext. Price
180+ $0.3234 $58.2120
435+ $0.2657 $115.5795
675+ $0.2576 $173.8800
930+ $0.2495 $232.0350
1,200+ $0.2414 $289.6800
1,605+ $0.2160 $346.6800
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Availability: 100,000 pieces
MOQ: 180 pcs
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