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Same model may have multiple batches, images only for reference.
AOW11N60 Real Image
Same model may have multiple batches, images only for reference.

AOW11N60

Part No AOW11N60
Manufacturer Alpha & Omega Semiconductor Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 11A TO262
Datasheet
AOW11N60 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Alpha & Omega Semiconductor Inc.
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 250μA
Max Gate Charge 37nC @ 10V
Max Input Capacitance 1990pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 272W (Tc)
Maximum Rds On at Id,Vgs 700 mOhm @ 5.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-262
Dimension TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 039223-AOW11N60
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian AOW11N60 CAD Model

Description

AOW11N60

Designed to meet the demands of high-performance applications, the AOW11N60 MOSFET is built to handle large currents and high voltages efficiently. Its design promotes easy integration into existing systems.

  • Low gate charge
  • Rugged construction
  • Fast recovery and low loss

Applications and Projects

  • Switch-mode power supplies
  • Power tools
  • Telecom power supplies

Features and Benefits

  • Low energy consumption leads to cost savings
  • Reliable under mechanical stress and vibrations
  • Maintains integrity at high temperatures

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