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Same model may have multiple batches, images only for reference.
AOW29S50 Alpha & Omega Semiconductor Inc.
Same model may have multiple batches, images only for reference.

AOW29S50

Part No AOW29S50
Manufacturer Alpha & Omega Semiconductor Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description 500V 29A a MOS TM Power Transistor
Datasheet
AOW29S50 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Alpha & Omega Semiconductor Inc.
Series aMOS
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 500V
Current - Continuous Drain (Id) @ 25°C 29A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 3.9V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 26.6nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 1312pF @ 100V
Vgs (Maximum) ±30V
Power Dissipation (Maximum) 357W (Tc)
Rds On (Maximum) @ Id, Vgs 150 mOhm @ 14.5A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package TO-262
Package TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 1145075-AOW29S50
Manufacturer Homepage www.aosmd.com
Popularity Medium
Supply and Demand Status Balance
Family Name AOW29S50
Introduction Date April 08, 2012
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2019
Ultra Librarian 3D Model Ultra Librarian AOW29S50 CAD Model

Description

The aMOS AOW29S50 is an N-channel MOSFET designed for use in a variety of applications, including power supplies, motor drives, and welding equipment.

  • Maximum Power Dissipation: 357W (Tc)
  • Drain-Source Voltage: 500V
  • Continuous Drain Current: 29A (Tc)
  • Maximum Rds On: 150 mOhm @ 14.5A, 10V
  • Gate-Source Threshold Voltage: 3.9V @ 250μA
  • Maximum Input Capacitance: 1312pF @ 100V
  • Package: TO-262-3 Long Leads, I2Pak, TO-262AA
  • Operating Temperature Range: -55°C to 150°C (TJ)

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