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BLF642,112

Part No BLF642,112
Manufacturer Ampleon USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description RF MOSFET LDMOS 32V SOT467C
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Estimated Pruduction Lead Time 25 Weeks
Features RF Mosfet LDMOS 32 V 200 mA 1.3GHz 19dB 35W SOT467C
Manufacturer Ampleon USA Inc.
Package Tray
Package SOT-467C
Case / Package SOT467C
Family Name BLF642
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0075
Other Part Number 568-7548-5-ND, BLF642,112-ND, BLF642112, 568-7548, 934065183112, 568-7548-5
Quantity per package 20
Popularity Medium
Supply and Demand Status Limited
Win Source Part Number 864285-BLF642,112
Ultra Librarian 3D Model Ultra Librarian BLF642,112 CAD Model

Description

The BLF642,112 is a N-channel enhancement mode lateral MOSFET transistor from Ampleon USA Inc., designed for high-power broadband applications in the HF to VHF frequency range. It's known for its ruggedness, high gain, and excellent thermal stability, making it suitable for demanding industrial and broadcast applications.

Applications:

  • HF/VHF Radio Transmitters: Used in broadcast transmitters for FM and VHF radio.
  • Industrial Heating: Employed in RF generators for industrial heating processes.
  • Plasma Generators: Utilized in plasma generators for various industrial applications.
  • Medical RF Applications: Found in RF-based medical equipment.
  • Scientific Research: Used in high-power RF amplifiers for scientific experiments.

Features:

  • High Output Power: Delivers high power output in the VHF/HF band.
  • High Gain: Offers significant gain, reducing the drive power requirements.
  • Broadband Capability: Suitable for use over a wide frequency range.
  • Excellent Ruggedness: Designed to withstand high VSWR and load mismatch conditions.
  • Integrated ESD Protection: Built-in ESD protection for enhanced reliability.

Benefits:

  • Increased Transmitter Range: High output power enables greater transmission distances.
  • Reduced System Complexity: High gain simplifies amplifier design.
  • Improved System Reliability: Ruggedness ensures stable operation under challenging conditions.
  • Lower Operating Costs: High efficiency reduces power consumption.
  • Simplified Manufacturing: Integrated ESD protection simplifies handling and assembly.

Additional Details:

The BLF642,112 is typically supplied in a flanged ceramic package for optimal thermal performance. It operates at a specified voltage and current, delivering its rated output power with high efficiency. The device is designed to be easily matched to 50-ohm systems. Key specifications include drain-source voltage, drain current, power dissipation, and operating frequency range. Detailed information regarding impedance matching, thermal management, and application circuits is available in the product datasheet provided by Ampleon USA Inc. It is commonly used in Class AB amplifier configurations to achieve a good balance between linearity and efficiency.

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