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BDT60C

Part No BDT60C
Manufacturer Bourns Inc.
Catalog Transistors (BJT) - Single
Description TRANS PNP DARL 120V 4A
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Bourns Inc.
Packaging Tube/Rail
Status Obsolete(EOL)
Transistor Polarity PNP - Darlington
Maximum Current Collector 4A
VCEO Maximum Collector-Emitter Breakdown Voltage 120V
Max Vce (sat) 2.5V @ 6mA, 1.5A
Collector Cut-off Current(Max) 500μA
Typical Gain (hFE) (Min) 750 @ 1.5A, 3V
Maximum Power Dissipation 2W
Temperature Range - Operating -65°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220
Win Source Part Number 201018-BDT60C
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian BDT60C CAD Model

Description

BDT60C - Power Transistor for Diverse Applications

The BDT60C is designed for high voltage and high current applications, making it ideal for demanding electronic circuits. This PNP transistor offers stability and efficiency, ensuring optimal performance in various projects.

  • Applications: Power supply, DC motors, linear and switching power supplies.
  • Features: High collector-emitter voltage, low collector-emitter saturation voltage, and high transition frequency.
  • Benefits: Enhanced efficiency, versatile use in multiple applications, and cost-effective stability.

The BDT60C is your go-to transistor for projects requiring robust handling and consistent power delivery.

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