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Same model may have multiple batches, images only for reference.
BDT61C Real Image
Same model may have multiple batches, images only for reference.

BDT61C

Part No BDT61C
Manufacturer Bourns Inc.
Catalog Transistors (BJT) - Single
Description TRANS NPN DARL 120V 4A
Datasheet
BDT61C Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Bourns Inc.
Packaging Tube/Rail
Status Obsolete(EOL)
Transistor Polarity NPN - Darlington
Maximum Current Collector 4A
VCEO Maximum Collector-Emitter Breakdown Voltage 120V
Max Vce (sat) 2.5V @ 6mA, 1.5A
Collector Cut-off Current(Max) 500μA
Typical Gain (hFE) (Min) 750 @ 1.5A, 3V
Maximum Power Dissipation 2W
Temperature Range - Operating -65°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220
Win Source Part Number 201019-BDT61C
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian BDT61C CAD Model

Description

BDT61C - Efficient PNP Transistor

The BDT61C offers a reliable solution for high gain and high current applications. As a PNP transistor, it is widely used in power switching and audio amplification, ensuring seamless connectivity.

  • Applications: Power amplifiers, inverters, and voltage regulation circuits.
  • Features: High gain bandwidth, high collector current, and low saturation voltage.
  • Benefits: Significant gain, robust design, and versatile application range.

Enhance your electronic projects with the BDT61C, designed for performance and versatility.

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