The BS616LV8017ECP55 is a high-performance, low-power static RAM (SRAM) chip manufactured by Brilliance Semiconductor. This SRAM is designed for applications requiring fast access times and low power consumption. The 8Mb memory capacity makes it suitable for various embedded systems, data buffering, and caching applications. Its 55ns access time ensures rapid data retrieval, enhancing overall system performance.

Applications

• Embedded systems
• Data buffering
• Cache memory
• Networking equipment
• Industrial control systems

Features

• High-Speed Access: Features a fast access time of 55ns, optimizing data retrieval speeds.
• Low Voltage Operation: Operates at a low voltage, reducing power consumption and extending battery life in portable devices.
• Low Power Consumption: Minimizes energy usage, making it ideal for power-sensitive applications.
• 8Mb Memory Capacity: Provides ample storage for a variety of data-intensive tasks.
• Wide Operating Temperature Range: Ensures reliable performance in diverse environmental conditions.

Benefits

• Enhanced System Performance: Fast access times improve overall system responsiveness and efficiency.
• Extended Battery Life: Low power consumption allows for longer operational periods in battery-powered devices.
• Reliable Data Storage: Offers stable and secure data storage for critical applications.
• Versatile Application: Suitable for a wide range of embedded systems and memory-intensive tasks.
• Compact Design: Available in a small package, saving valuable board space.

Technical Specifications

The BS616LV8017ECP55 has a memory organization of 512K x 16 bits. It typically operates on a voltage supply of 3.3V or 5V, with a low standby current to minimize power consumption when not actively in use. The operating temperature ranges from -40°C to +85°C. It is available in various package types, including TSOP and SOP, to accommodate different mounting requirements.

This SRAM provides a balance between speed and energy efficiency, making it a reliable choice for applications that demand both performance and power conservation. Its high memory capacity and fast access times make it a valuable component in modern electronic designs.