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Same model may have multiple batches, images only for reference.
AT-32011-TR1 Agilent(Hewlett-Packard)
Same model may have multiple batches, images only for reference.

AT-32011-TR1

Part No AT-32011-TR1
Manufacturer Broadcom Limited
Catalog RF Transistors (BJT)
Description RF TRANS NPN 5.5V SOT143
Datasheet
AT-32011-TR1 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Bipolar RF Transistors
Mfr Broadcom Limited
Package Tape & Reel
Product Status Obsolete
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 5.5V
Noise Figure (dB Typ @ f) 1dB ~ 1.3dB @ 900MHz
Gain 12.5dB ~ 14dB
Power - Max 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 2mA, 2.7V
Current - Collector (Ic) (Max) 32mA
Temperature Range - Operating 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-253-4, TO-253AA
Supplier Device Package SOT-143
Base Product Number AT-32011
Standard Package 3,000 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 565689-AT-32011-TR1
Ultra Librarian 3D Model Ultra Librarian AT-32011-TR1 CAD Model

Description

The AT-32011-TR1 is a bipolar RF transistor designed for high-frequency applications.

  • Type: Bipolar RF Transistor
  • Manufacturer: Broadcom Limited
  • Transistor Type: NPN
  • Power Rating (Maximum): 200mW
  • Collector-Emitter Breakdown Voltage: 5.5V
  • Collector Current (Maximum): 32mA
  • Gain: 12.5dB to 14dB
  • Package: Surface Mount
  • Package Compatibility: TO-253-4 and TO-253AA
  • Operating Temperature: Up to 150°C
  • Status: Obsolete

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