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Same model may have multiple batches, images only for reference.
AT-42010
Same model may have multiple batches, images only for reference.

AT-42010

Part No AT-42010
Manufacturer Broadcom Limited
Catalog Transistors - FETs, MOSFETs - RF
Description TRANS NPN BIPO 12V 80MA 100-SMD / Trans RF BJT NPN 12V 0.08A 4-Pin Case 100
Datasheet
AT-42010 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Broadcom Limited
Packaging Bulk
Part Status Obsolete(EOL)
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Maximum) 12V
Frequency - Transition 8GHz
Noise Figure (dB Typ @ f) 1.9dB ~ 3dB @ 2GHz ~ 4GHz
Gain 10dB ~ 13.5dB
Power - Max 600mW
DC Current Gain (hFE) (Minimum) @ Ic, Vce 30 @ 35mA, 8V
Current - Collector (Ic) (Maximum) 80mA
Operating Temperature Range 200°C (TJ)
Mounting SMD
Package 4-SMD (100 mil)
Win Source Part Number 769002-AT-42010
Popularity Medium
Supply and Demand Status Limited
Family Name AT-42010
Introduction Date April 01, 2004
ECCN EAR99
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian AT-42010 CAD Model

Description

It has a gain of 10dB ~ 13.5dB and a frequency transition of 8GHz. This part is designed for use in RF amplifiers and has a maximum power of 600mW. It is important to note that this part is not interchangeable with other transistors.

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44+ $4.0090 $176.3960
60+ $3.8796 $232.7760
77+ $3.7503 $288.7731
104+ $3.3622 $349.6688
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Availability: 15,000 pieces
MOQ: 12 pcs
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