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Same model may have multiple batches, images only for reference.
2SC3357-T1-RF-A
Same model may have multiple batches, images only for reference.

2SC3357-T1-RF-A

Part No 2SC3357-T1-RF-A
Manufacturer CEL
Catalog RF Transistors (BJT)
Description SAME AS NE85634 NPN SILICON MEDI
Datasheet
2SC3357-T1-RF-A Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer CEL
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity NPN
VCEO Maximum Collector-Emitter Breakdown Voltage 12V
Frequency - Transition 6.5GHz
Noise Figure (dB Typ @ f) 1.8dB @ 1GHz
Gain 10dB
Maximum Power Dissipation 1.2W
Typical Gain (hFE) (Min) 50 @ 20mA, 10V
Maximum Current Collector 100mA
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-89
Win Source Part Number 1004374-2SC3357-T1-RF-A
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian 2SC3357-T1-RF-A CAD Model

Description

The CEL 2SC3357-T1-RF-A is an NPN transistor with a gain of 10dB and a frequency transition of 6.5GHz.

  • Gain: 10dB
  • Frequency Transition: 6.5GHz
  • Package: SOT-89
  • Mounting: SMD technology
  • Noise Figure: 1.8dB @ 1GHz
  • Maximum Collector Current: 100mA
  • Collector-Emitter Breakdown Voltage: 12V
  • Typical Gain: 50 @ 20mA, 10V
  • Maximum Power Dissipation: 1.2W
  • Status: Obsolete

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