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Same model may have multiple batches, images only for reference.
NE685M03-T1-A
Same model may have multiple batches, images only for reference.

NE685M03-T1-A

Part No NE685M03-T1-A
Manufacturer CEL
Catalog RF Transistors (BJT)
Description TRANSISTOR NPN 2GHZ M03
Datasheet
NE685M03-T1-A Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer CEL
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity NPN
VCEO Maximum Collector-Emitter Breakdown Voltage 5V
Frequency - Transition 12GHz
Noise Figure (dB Typ @ f) 1.5dB to 2.5dB @ 2GHz
Maximum Power Dissipation 125mW
Typical Gain (hFE) (Min) 75 @ 10mA, 3V
Maximum Current Collector 30mA
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package M03
Win Source Part Number 1082924-NE685M03-T1-A
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NE685M03-T1-A CAD Model

Description

The 1082924-NE685M03-T1-A electronic component is a product manufactured by CEL.

  • Status: Obsolete (EOL)
  • Temperature Range: 150°C (TJ)
  • Maximum Current Collector: 30mA
  • VCEO Maximum Collector-Emitter Breakdown Voltage: 5V
  • Typical Gain (hFE) (Min): 75 @ 10mA, 3V
  • Maximum Power Dissipation: 125mW
  • Category: Discrete Semiconductor Products
  • Popularity: Medium

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