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Same model may have multiple batches, images only for reference.
UPA800T-T1 Real Image
Same model may have multiple batches, images only for reference.

UPA800T-T1

Part No UPA800T-T1
Manufacturer CEL
Catalog RF Transistors (BJT)
Description TRANS NPN HF FT=8GHZ SOT-363
Datasheet
UPA800T-T1 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer CEL
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity 2 NPN (Dual)
VCEO Maximum Collector-Emitter Breakdown Voltage 10V
Frequency - Transition 8GHz
Noise Figure (dB Typ @ f) 1.9dB to 3.2dB @ 2GHz
Maximum Power Dissipation 200mW
Typical Gain (hFE) (Min) 80 @ 5mA, 3V
Maximum Current Collector 35mA
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-SO
Win Source Part Number 052962-UPA800T-T1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian UPA800T-T1 CAD Model

Description

The CEL UPA800T-T1 dual NPN transistor is a discrete semiconductor product that is used in various applications.

  • Maximum Current Collector: 35mA
  • VCEO Maximum Collector-Emitter Breakdown Voltage: 10V
  • Typical Gain (hFE) @ 5mA and 3V: 80
  • Mounting: Surface-mount device (SMD)
  • Case: 6-SO

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