The UPC272G is a Silicon NPN Epitaxial Planar Transistor designed for use in various high-frequency amplifier applications. Manufactured by CEL (California Eastern Laboratories), this transistor offers excellent performance characteristics and reliability. It is commonly employed in communication systems, instrumentation, and other applications requiring high gain and low noise amplification.

Applications

• High-frequency amplifiers
• Oscillators
• Mixers
• Communication systems
• Instrumentation amplifiers

Features

• High gain: Provides significant amplification for weak signals.
• Low noise figure: Ensures minimal added noise to the amplified signal.
• High transition frequency: Suitable for use in high-frequency circuits.
• Excellent linearity: Maintains signal integrity with minimal distortion.
• Surface mount package: Allows for easy and efficient assembly onto circuit boards.

Benefits

• Improved signal quality: Due to the low noise figure, the UPC272G ensures clear and accurate signal amplification.
• Enhanced system performance: High gain and linearity contribute to overall better performance in communication and instrumentation systems.
• Reduced design complexity: Its characteristics simplify the design of high-frequency amplifier circuits.
• Cost-effective solution: Offers a balance of performance and cost, making it a suitable choice for various applications.
• Reliable operation: Designed and manufactured to ensure long-term reliability and stable performance.

Additional Details

The UPC272G is housed in a small surface-mount package, making it suitable for applications where space is limited. Its electrical characteristics are optimized for operation in the VHF and UHF frequency ranges. The transistor's high transition frequency (fT) allows it to efficiently amplify signals without significant roll-off at higher frequencies. Detailed specifications, including DC characteristics, S-parameters, and noise figure data, are available in the manufacturer's datasheet. Careful consideration should be given to biasing and impedance matching to achieve optimal performance in specific application circuits.