The 2N4952 is a silicon NPN transistor manufactured by Central Semiconductor Corp. It is designed for amplifier and switching applications requiring high voltage and fast switching speeds.

Applications

• High-voltage switching circuits
• High-frequency amplifiers
• Oscillators
• Voltage regulators
• Pulse amplifiers

Features

• NPN Silicon Transistor
• High Collector-Emitter Breakdown Voltage (VCEO)
• High Transition Frequency (fT)
• Low Collector-Base Capacitance
• High DC Current Gain (hFE)
• RoHS Compliant

Benefits

• Suitable for high-voltage applications, preventing breakdown and ensuring reliability.
• Enables fast switching in high-speed digital circuits.
• Provides efficient amplification with minimal distortion at high frequencies.
• Reduces power consumption in high-frequency applications.
• Offers stable performance across a wide range of operating conditions.

Technical Specifications

The 2N4952 features a Collector-Emitter Breakdown Voltage (VCEO) of typically 300V. The Collector Current (IC) is rated at 50mA. The DC Current Gain (hFE) ranges from 20 to 100 depending on the operating conditions. It has a Transition Frequency (fT) of around 50 MHz, making it suitable for high-frequency applications. The operating and storage temperature range is typically from -65°C to +150°C.

It is typically packaged in a TO-18 metal can package.