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2N5022

Part No 2N5022
Manufacturer Central Semiconductor Corp
Catalog Hard To Find
Description PNP SILICON TRANSISTOR
Sample
Rohs State Need to verify
ECAD Module
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RoHS State Request Verification
Manufacturer Central Semiconductor Corp
Win Source Part Number 1123909-2N5022
Manufacturer Homepage www.centralsemi.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian 2N5022 CAD Model

Description

The 2N5022 is a high-voltage NPN transistor manufactured by Central Semiconductor Corp. It is designed for use in applications where high voltage handling capability is essential, such as high-voltage switching regulators, inverters, and deflection circuits.

Applications

  • High-Voltage Switching Regulators
  • Inverters
  • Deflection Circuits
  • High-Voltage Amplifiers
  • CRT Displays

Features

  • NPN Silicon Transistor
  • High Collector-Emitter Breakdown Voltage (VCEO)
  • Low Collector Cutoff Current
  • High-Speed Switching Capability
  • Good Linearity

Benefits

  • High Voltage Capability: Designed to withstand high voltage levels without breakdown.
  • Reliable Switching: Provides reliable and efficient switching performance at high voltages.
  • Low Leakage Current: Minimizes power loss and improves efficiency.
  • Stable Performance: Offers consistent performance over a wide range of operating conditions.
  • Versatile High-Voltage Applications: Suitable for a variety of high-voltage applications.

Additional Details

The 2N5022 typically features a collector-emitter voltage (VCEO) rating of 300-400V, a collector current (IC) rating of around 500mA-1A, and a power dissipation (PD) rating of approximately 10-20W. However, these values can vary depending on the specific manufacturer and should always be confirmed in the datasheet. It is often packaged in a TO-5 or TO-66 package. A heat sink may be necessary for applications involving high power dissipation. Designers should consult the datasheet for safe operating area (SOA) curves and derating factors to ensure reliable operation at elevated temperatures. Proper voltage and current limiting techniques should be employed to prevent device failure due to overvoltage or overcurrent conditions.

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