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Same model may have multiple batches, images only for reference.
CMKDM8005 TR Real Image
Same model may have multiple batches, images only for reference.

CMKDM8005 TR

Part No CMKDM8005 TR
Manufacturer Central Semiconductor Corp
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2P-CH 20V 0.65A SOT363
Datasheet
CMKDM8005 TR Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Central Semiconductor Corp
Packaging Reel - TR
Status Active
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 650mA
Maximum Rds On at Id,Vgs 360 mOhm @ 350mA, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 1.2nC @ 4.5V
Max Input Capacitance 100pF @ 16V
Maximum Power Dissipation 350mW
Temperature Range - Operating -65°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-363
Win Source Part Number 1029610-CMKDM8005 TR
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian CMKDM8005 TR CAD Model

Description

The Central Semiconductor Corp CMKDM8005 TR is a dual P-channel FET that is ideal for logic level gate applications.

  • Channel Type: Dual P-channel
  • Application: Logic level gate
  • Status: Active
  • Packaging: SOT-363
  • Power Dissipation: 350mW
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 650mA @ 25°C
  • Gate-Source Threshold Voltage: 1V @ 250μA
  • Gate Charge: 1.2nC @ 4.5V
  • Input Capacitance: 100pF @ 16V
  • Rds On @ Id,Vgs: 360 mOhm @ 350mA, 4.5V
  • Supply and Demand Status: Balanced

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Quantity Unit Price Ext. Price
20+ $2.9175 $58.3500
49+ $2.3932 $117.2668
75+ $2.3192 $173.9400
103+ $2.2442 $231.1526
134+ $2.1691 $290.6594
179+ $1.9450 $348.1550
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