The CMUDM8001 TR is an active P-channel MOSFET from Central Semiconductor Corp.

• Maximum Power Dissipation: 250mW (Ta)
• Drain-Source Breakdown Voltage: 20V
• Packaging: reel-TR
• Mounting: SMD (SMT)
• Technology: MOSFET
• Polarity: P-channel
• Drive Voltage (max Rds on, min Rds on): 1.5V, 4V
• Temperature Range for Operating: -65°C to 150°C (TJ)
• Case/Package: SOT-523
• Dimension: SOT-523
• Continuous Drain Current @ 25°C: 100mA (Ta)
• Gate-Source Threshold Voltage: 1.1V @ 250μA
• Maximum Gate Charge: 0.66nC @ 4.5V
• Maximum Input Capacitance: 45pF @ 3V
• Maximum Gate-Source Voltage: 10V
• Maximum Rds on @ Id,Vgs: 8 Ohm @ 10mA, 4V