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Same model may have multiple batches, images only for reference.
CMXDM7002A TR Real Image
Same model may have multiple batches, images only for reference.

CMXDM7002A TR

Part No CMXDM7002A TR
Manufacturer Central Semiconductor Corp
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 60V 0.28A SOT26
Datasheet
CMXDM7002A TR Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Central Semiconductor Corp
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Standard
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 280mA
Maximum Rds On at Id,Vgs 2 Ohm @ 500mA, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 0.59nC @ 4.5V
Max Input Capacitance 50pF @ 25V
Maximum Power Dissipation 350mW
Temperature Range - Operating -65°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-26
Win Source Part Number 1029749-CMXDM7002A TR
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian CMXDM7002A TR CAD Model

Description

The CMXDM7002A TR is a dual N-channel FET that is ideal for various applications.

  • FET Type: Standard
  • Case/Package: SOT-26
  • Maximum Power Dissipation: 350mW
  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current @ 25°C: 280mA
  • Gate-Source Threshold Voltage: 2.5V @ 250μA
  • Maximum Gate Charge: 0.59nC @ 4.5V
  • Maximum Input Capacitance: 50pF @ 25V
  • Maximum Rds on @ Id,Vgs: 2 Ohm @ 500mA, 10V
  • Mounting: Surface Mounted
  • Package: Reel

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