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CJ3139KDW-G

Part No CJ3139KDW-G
Manufacturer Comchip Technology
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2PCH 20V 660MA SOT363
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Comchip Technology
Packaging Reel - TR
Status Active
FET Type 2 P-Channel (Dual)
FET Feature Standard
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 660mA (Ta)
Maximum Rds On at Id,Vgs 520 mOhm @ 1A, 4.5V
Gate-Source Threshold Voltage 1.1V @ 250μA
Max Input Capacitance 170pF @ 16V
Maximum Power Dissipation 150mW
Temperature Range - Operating -40°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-363
Win Source Part Number 1029249-CJ3139KDW-G
Popularity Medium
Supply and Demand Status Sufficient
Quantity per package 3k pcs
Ultra Librarian 3D Model Ultra Librarian CJ3139KDW-G CAD Model

Description

The Comchip Technology Dual P-Channel FET is a high-quality electronic component that is designed for use in a wide range of applications.

  • Mounting Type: Surface Mount
  • Package: SOT-363
  • Power Dissipation - Max: 150mW
  • Voltage - Drain Source Breakdown (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 660mA
  • Popularity: Medium
  • Supply and Demand Status: Sufficient
  • Packaging: Reel - TR
  • Quantity Per Package: 3k pcs

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Pricing & Ordering

Quantity Unit Price Ext. Price
280+ $0.2093 $58.6040
675+ $0.1718 $115.9650
1,045+ $0.1665 $173.9925
1,435+ $0.1610 $231.0350
1,855+ $0.1557 $288.8235
2,485+ $0.1395 $346.6575
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 39,500 pieces
MOQ: 280 pcs
Order Increment : 1 pcs
*Need More Quantity? *Request a Bulk Quantity Quotation?

Shipping Information

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